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PSMN165-200K
N-channel enhancement mode field-effect transistor
Rev. 01 -- 16 January 2001 Product specification
1. Description
SiliconMAXTM1 products use the latest Philips TrenchMOSTM2 technology to achieve the lowest possible on-state resistance in a SOT96-1 (SO8) package. Product availability: PSMN165-200K in SOT96-1 (SO8).
2. Features
s Very low on-state resistance s Fast switching s TrenchMOSTM technology.
3. Applications
s DC to DC convertor s Computer motherboards s Switch mode power supplies.
c c
4. Pinning information
Table 1: Pin 1,2,3 4 5,6,7,8 Pinning - SOT96-1, simplified outline and symbol Description source (s)
8 5 d
Simplified outline
Symbol
gate (g) drain (d)
1 Top view 4
MBK187
g s
MBB076
SOT96-1 (SO8)
1. 2.
SiliconMAX is a trademark of Royal Philips Electronics. TrenchMOS is a trademark of Royal Philips Electronics.
Philips Semiconductors
PSMN165-200K
N-channel enhancement mode field-effect transistor
5. Quick reference data
Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions Tj = 25 to 150 C Tsp = 80 C Tsp = 80 C VGS = 10 V; ID = 2.5 A; Tj = 25 C Typ - - - - 130 Max 200 2.9 3.5 150 165 Unit V A W C m drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance Symbol Parameter
6. Limiting values
Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VGS ID IDM Ptot Tstg Tj IS ISM drain-source voltage (DC) gate-source voltage (DC) drain current (DC) peak drain current total power dissipation storage temperature operating junction temperature source (diode forward) current (DC) Tsp = 80 C peak source (diode forward) current Tsp = 25 C; pulsed; tp 10 s Tsp = 80 C; Figure 2 and 3 Tsp = 25 C; pulsed; tp 10 s Tsp = 80 C; Figure 1 Conditions Tj = 25 to 150 C Min - - - - - -55 -55 - - Max 200 20 2.9 20 3.5 +150 +150 3.1 20 Unit V V A A W C C A A
Source-drain diode
9397 750 07896
(c) Philips Electronics N.V. 2001. All rights reserved.
Product specification
Rev. 01 -- 16 January 2001
2 of 13
Philips Semiconductors
PSMN165-200K
N-channel enhancement mode field-effect transistor
03aa17
03aa25
120
Pder (%) 100
120
Ider (%) 100
80
80
60
60
40
40
20
20
0 0 25 50 75 100 125
Tsp
0 150 (oC) 175 0 25 50 75 100 125 150 175 Tsp (oC)
P tot P der = ---------------------- x 100% P
tot ( 25 C )
VGS 5 V ID I der = ------------------ x 100% I
D ( 25 C )
Fig 1. Normalized total power dissipation as a function of solder point temperature.
102 ID (A) 10 RDSon = VDS/ ID
Fig 2. Normalized continuous drain current as a function of solder point temperature.
03ae06
tp = 10 s 100 s 1 ms
1
P
10 ms
=
tp T
D.C.
100 ms
10-1
tp T t
10-2 1 10 102 VDS (V) 103
Tsp = 25 C; IDM is single pulse
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 07896
(c) Philips Electronics N.V. 2001. All rights reserved.
Product specification
Rev. 01 -- 16 January 2001
3 of 13
Philips Semiconductors
PSMN165-200K
N-channel enhancement mode field-effect transistor
7. Thermal characteristics
Table 4: Rth(j-sp) Thermal characteristics Conditions mounted on a metal clad substrate; Figure 4 Value Unit 20 K/W thermal resistance from junction to solder point Symbol Parameter
7.1 Transient thermal impedance
03ae05
102 Zth(j-sp) (K/W) 10 = 0.5 0.2 0.1 1 0.05 0.02
P
=
tp T
10-1 single pulse 10-2 10-4 10-3 10-2 10-1 1 10 tp (s) 102
tp T t
Tsp = 25 C
Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration.
9397 750 07896
(c) Philips Electronics N.V. 2001. All rights reserved.
Product specification
Rev. 01 -- 16 January 2001
4 of 13
Philips Semiconductors
PSMN165-200K
N-channel enhancement mode field-effect transistor
8. Characteristics
Table 5: Characteristics Tj = 25 C unless otherwise specified Symbol Parameter Static characteristics V(BR)DSS drain-source breakdown voltage VGS(th) gate-source threshold voltage ID = 250 A; VGS = 0 V; Tj = 25 C ID = 1 mA; VDS = VGS; Figure 9 Tj = 25 C Tj = 150 C Tj = -55 C IDSS IGSS RDSon drain-source leakage current gate-source leakage current drain-source on-state resistance VDS = 160 V; VGS = 0 V; Tj = 25 C VDS = 200 V; VGS = 0 V; Tj = 150 C VGS = 20 V; VDS = 0 V VGS = 10 V; ID = 2.5 A; Figure 7 and 8 Tj = 25 C Tj = 150 C Dynamic characteristics gfs Qg(tot) Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf VSD trr Qr forward transconductance total gate charge gate-source charge gate-drain (Miller) charge input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time source-drain (diode forward) voltage IS = 2.3 A; VGS = 0 V; Figure 13 reverse recovery time recovery charge IS = 2.9 A; dIS/dt = -100 A/s; VGS = 0 V VDD = 100 V; RD = 100 ; VGS = 10 V; RG = 6 VGS = 0 V; VDS = 25 V; f = 1 MHz; Figure 12 VDS = 15 V; ID = 2.9 A; Figure 11 ID = 3 A; VDD = 100 V; VGS = 10 V; Figure 14 - - - - - - - - - - - - - - 10 40 4.5 12 140 70 12 11 50 25 0.7 105 0.45 - - - 16.5 - - 25 25 80 40 1.1 - - S nC nC nC pF pF pF ns ns ns ns V ns C - - 130 325 165 413 m m 2 1.2 - - - - - - - - - - 4 - 6 1 0.5 100 V V V A mA nA 200 240 - V Conditions Min Typ Max Unit
1330 -
Source-drain (reverse) diode
9397 750 07896
(c) Philips Electronics N.V. 2001. All rights reserved.
Product specification
Rev. 01 -- 16 January 2001
5 of 13
Philips Semiconductors
PSMN165-200K
N-channel enhancement mode field-effect transistor
03ae07
03ae09
20 ID (A) 15
VGS = 10 V 5 V
20 ID (A) 15 VDS > ID X RDSon
4.5 V 10
10
5 4V 3.5 V 0 0 1 2 3 4 VDS (V) 5
5 Tj = 150 C 25 C
0 0 1 2 3 4 VGS (V) 5
Tj = 25 C
Tj = 25 C and 150 C; VDS > ID x RDSon
Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values.
Fig 6. Transfer characteristics: drain current as a function of gate-source voltage; typical values.
03aa31
03ae08
a
0.3 VGS = 4 V RDSon () 0.25 4.5 V Tj = 25 C
0.2
5V 10 V
0.15
3 2.8 2.6 2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 -60 -20 20 60 100 140 180 Tj (oC)
0.1 0 5 10 15 ID (A) 20
Tj = 25 C
R DSon a = --------------------------R
DSon ( 25 C )
Fig 7. Drain-source on-state resistance as a function of drain current; typical values.
Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature.
9397 750 07896
(c) Philips Electronics N.V. 2001. All rights reserved.
Product specification
Rev. 01 -- 16 January 2001
6 of 13
Philips Semiconductors
PSMN165-200K
N-channel enhancement mode field-effect transistor
5
VGS(th) (V)
03aa32
10-1
ID (A)
03aa35
4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 -60 -20 20 60 100 140 Tj (oC) 180
min typ. max.
10-2
10-3 min 10-4 typ max
10-5
10-6 0 1 2 3 4 VGS (V) 5
ID = 1 mA; VDS = VGS
Tj = 25 C; VDS = 5 V
Fig 9. Gate-source threshold voltage as a function of junction temperature.
03ae10
Fig 10. Sub-threshold drain current as a function of gate-source voltage.
104 Ciss, Coss, Crss (pF) 103
03ae12
30 gfs (S) 25
VDS > ID X RDSon Tj = 25 C
Ciss
20 150 C 15
10
102
Coss Crss
5
0 0 5 10 15 ID (A) 20
10 10-1 1 10 VDS (V) 102
Tj = 25 C and 150 C; VDS > ID x RDSon
VGS = 0 V; f = 1 MHz
Fig 11. Forward transconductance as a function of drain current; typical values.
Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.
9397 750 07896
(c) Philips Electronics N.V. 2001. All rights reserved.
Product specification
Rev. 01 -- 16 January 2001
7 of 13
Philips Semiconductors
PSMN165-200K
N-channel enhancement mode field-effect transistor
03ae11
03ae13
20 VGS = 0 V IS (A) 15
10 VGS (V) Tj = 25 C 8 ID = 3 A
VDD = 40 V 100 V 160 V
6 10 4 5
Tj = 150 C
25 C
2
0 0 0.2 0.4 0.6 0.8 VSD (V) 1
0 0 15 30 QG (nC) 45
Tj = 25 C and 150 C; VGS = 0 V
ID = 3 A; VDD = 40 V, 100 V and 160 V
Fig 13. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values.
Fig 14. Gate-source voltage as a function of gate charge; typical values.
9397 750 07896
(c) Philips Electronics N.V. 2001. All rights reserved.
Product specification
Rev. 01 -- 16 January 2001
8 of 13
Philips Semiconductors
PSMN165-200K
N-channel enhancement mode field-effect transistor
9. Package outline
SO8: plastic small outline package; 8 leads; body width 3.9 mm SOT96-1
SO8: plastic small outline package; 8 leads; body width 3.9 mm
SOT96-1
D
E
A X
D
E
A X
c y
y c HE
HE
vMA
vMA
Z 8
Z 8
5
5
Q
A2
A2
Q A1 1
A
(A 3)
(A 3)
A
A
pin 1 index pin 1 index
Lp Lp L wM wM detail X
1
1
44
e
L
e
bp
bp
detail X
0
2.5 scale 2.5
5 mm
0
5 mm
DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT max. A1 bp c D E e H DIMENSIONS (inch dimensionsA 2 derived from the original mm dimensions)E are A 3 A
(1) (2)
scale
L 1.05L
Lp
Q
v
w 0.25 v
y 0.1 w
Z (1) 0.7 y 0.3
UNIT mm inches
A mm max.
1.75 A1
0.25 A2 0.10
1.45 A 1.253
0.25 p b
0.49 0.25 (1) 5.0 0.36 c 0.19 D 4.8
(2) E3.8
4.0
1.27 e
6.2 H 5.8E
1.0 0.7 0.25 0.4 L p 0.6 Q
0.010 0.057 0.019 0.0100 0.20 0.49 0.25 5.0 inches 0.25 0.069 1.45 0.01 0.004 0.049 0.014 0.0075 0.19 1.75 0.25
0.10
1.25
0.36
0.19
4.8
0.16 4.0 0.15
3.8
0.244 1.0 6.2 0.041 0.039 0.028 0.7 0.050 0.01 0.01 1.27 0.228 1.05 0.016 0.024 0.25
5.8
0.4
0.6
0.028 0.004 0.25 0.012 0.1
8 0o
Z (1) o 0.7 0.3
0.019 0.0100 0.20 0.16 Notes 0.010 0.057 0.050 0.069 0.01 0.014 0.0075 0.19 1. Plastic0.004 0.049 or metal protrusions of 0.15 mm maximum per side are0.15included. not 2. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
0.244 0.039 0.028 0.041 0.228 0.016 0.024
0.01
0.01
0.028 0.004 0.012
8 0o
o
Notes REFERENCES OUTLINE 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. VERSION IEC JEDEC EIAJ 2. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
SOT96-1 076E03 MS-012
EUROPEAN PROJECTION
ISSUE DATE 97-05-22 99-12-27
OUTLINE VERSION SOT96-1
REFERENCES IEC 076E03 JEDEC MS-012 EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-05-22 99-12-27
Fig 15. SOT96-1 (SO8).
9397 750 07896 (c) Philips Electronics N.V. 2001. All rights reserved.
Product specification
Rev. 01 -- 16 January 2001
9 of 13
Philips Semiconductors
PSMN165-200K
N-channel enhancement mode field-effect transistor
10. Revision history
Table 6: 01 Revision history CPCN Description Product specification; initial version
Rev Date 20010116
9397 750 07896
(c) Philips Electronics N.V. 2001. All rights reserved.
Product specification
Rev. 01 -- 16 January 2001
10 of 13
Philips Semiconductors
PSMN165-200K
N-channel enhancement mode field-effect transistor
11. Data sheet status
Datasheet status Objective specification Preliminary specification Product status Development Qualification Definition [1] This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice. This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product.
Product specification
Production
[1]
Please consult the most recently issued data sheet before initiating or completing a design.
12. Definitions
Short-form specification -- The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition -- Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information -- Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification.
13. Disclaimers
Life support -- These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes -- Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
9397 750 07896
(c) Philips Electronics N.V. 2001 All rights reserved.
Product specification
Rev. 01 -- 16 January 2001
11 of 13
Philips Semiconductors
PSMN165-200K
N-channel enhancement mode field-effect transistor
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Internet: http://www.semiconductors.philips.com
(SCA71)
9397 750 07896
(c) Philips Electronics N.V. 2001. All rights reserved.
Product specification
Rev. 01 -- 16 January 2001
12 of 13
Philips Semiconductors
PSMN165-200K
N-channel enhancement mode field-effect transistor
Contents
1 2 3 4 5 6 7 7.1 8 9 10 11 12 13 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Transient thermal impedance . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
(c) Philips Electronics N.V. 2001.
Printed in The Netherlands
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 16 January 2001 Document order number: 9397 750 07896

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